• Aluminum-based contacts for use in GaSb-based diode lasers 

      Tran, Thanh-Nam; Patra, Saroj Kumar; Breivik, Magnus; Fimland, Bjørn-Ove (Journal article; Peer reviewed, 2016)
      Aluminum-based contacts could be a good alternative to conventional gold-based contacts for a number of GaSb-based devices. In this study, the use of some Al-based contacts in GaSb-based diode lasers was investigated via ...
    • Critical thickness of MBE-grown Ga1-xInxSb (x < 0.2) on GaSb 

      Nilsen, Tron Arne; Breivik, Magnus; Selvig, Espen; Fimland, Bjørn-Ove (Journal article; Peer reviewed, 2009)
      Several Ga1−xInxSb layers, capped with 1 μm of GaSb, were grown on GaSb(0 0 1) substrates by molecular beam epitaxy in a Varian Gen II Modular system using either the conventional sample growth position with substrate ...
    • Fabrication of mid-infrared laser diodes: for gas sensing applications 

      Breivik, Magnus (Doktoravhandlinger ved NTNU, 1503-8181; 2013:373, Doctoral thesis, 2013)
      Mid-infrared laser diodes have been fabricated and tested, and semiconductor materials related to mid-infrared lasers have been characterized by X-ray diffraction (XRD). The temperature dependent lattice constant of Al0.9 ...
    • Plasma-assisted oxide removal from p-type GaSb for low resistivity ohmic contacts 

      Tran, Thanh-Nam; Patra, Saroj Kumar; Breivik, Magnus; Fimland, Bjørn-Ove (Journal article, 2015)
      The effect of several plasma-assisted oxide removal techniques prior to metallization of p-type GaSb was investigated. Compared to conventional chemical methods, the plasma-assisted oxide removal resulted in significant ...